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| @vic AV13005 TO-220 NPN SILICON POWER TRANSISTOR AV13005 TRANSISTOR NPN FEATURES Power dissipation PCM : 1.5 WTamb=25 Collector current ICM : 4.0 A Collector-base voltage V(BR)CBO : 700 V Operating and storage junction temperature range TJTstg: -55 to +150 ELECTRICAL CHARACTERISTICSTamb=25 unless otherwise specified Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Fall time Storage time Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO HFE2 VCE(sat) VBE(sat) Test conditions Ic= 1000A IE=0 Ic= 10 mA IB=0 IE= 1000A IC=0 VCB= 700 V IE=0 VCE= 400 V IB=0 VEB= 9 V IC=0 VCE= 5V, IC = 1000 mA IC= 2000 mA, IB= 500 mA IC= 2000mA, IB= 500mA VCE= 10 V, IC= 500 mA MIN 700 400 9 MAX UNIT V V V 1000 100 1000 10 40 0.6 1.6 5 0.9 4.0 A A A V V MHz fT TF TS f =1MHz IB1 = - IB2 =0.4A, IC =2A VCC =120V S CLASSIFICATION OF HFE(2) Rank Range A 10-15 B1 15-20 B2 20-25 C 25-30 D 30-35 E 35-40 Copyright (c) Avic Electronics Corp. 1 Website: http://www.avictek.com @vic Typical Characteristics VCE - Collector-Emitter Voltage (V) 100 h EF - DC Current Gain 70 50 30 20 -55 C TJ =150 C 25 C 2.0 1.6 1.2 0.8 0.4 0 0.03 0.05 0.1 AV13005 TJ =25 C IC =1A 2A 3A 4A 10 VCE = 2V VCE = 5V 7 5 0.04 0.06 0.1 0.2 0.4 0.6 1 2 4 0.2 0.3 0.5 0.7 1 23 IC, COLLECTOR CURRENT (AMP) Figure 1. DC Current Gain IB, BASE CURRENT (AMP) Figure 2. Collector Saturation Ri VBE - Base-Emitter Voltage (V) 1.3 1.1 0.9 0.7 0.5 VCE(sat) - Collector-Emitter Satlration Voltage (V) VBE(sat) @ IC/IB = 4 VBE(on) @ VCE = 2 TJ =-55 C 25 C 25 C 150 C 0.2 0.4 0.6 1 2 4 0.55 IC/IB = 4 0.45 0.35 0.25 0.15 0.05 0.04 0.06 0.1 0.4 0.6 1 25 C TJ =-55 C 150 C 0.2 2 4 0.3 0.04 0.06 0.1 IC, COLLECTOR CURRENT (AMP) Figure 3. Base-Emitter Voltage IC, COLLECTOR CURRENT (AMP) Figure 4. Collector-Emitter Saturation Vl 10k IC- Collector Current (A) 1k 100 10 1 0.1 -0.4 VCE =250V C,Capacitance (pF) TJ =150C 125C 100C 75C 50C 25C -0.2 0 +0.2 +0.4 +0.6 2k 1k 700 500 300 200 100 70 50 30 20 Cib Cob 0.3 0.5 1 3 5 10 30 50 100 300 VBE, BASE-EMITTER VOLTAGE Figure 5. Collector Cutoff Region VR Reverse Voltage Figure 6. Capacitance Copyright (c) Avic Electronics Corp. 2 Website: http://www.avictek.com |
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